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| PNP Silicon AF Transistor BC 807W BC 808W q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W (NPN) 3 1 2 Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs Ordering Code (tape and reel) Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 Q62702-C2329 Q62702-C2330 Pin Configuration 1 B 2 E 3 C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector peak current Base current Total power dissipation, Junction temperature Storage temperature range Thermal Resistance Junction - ambient 1) Junction - soldering point 1) Symbol Values BC 807W BC 808W 25 30 5 500 1 100 250 150 - 65 ... + 150 45 50 Unit V VCEO VCBO VEBO IC ICM IB TS = 130 C Ptot Tj Tstg mA A mA mW C RthJA RthJS 215 80 K/W Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm /0.5 cm2 Cu BC 807W BC 808W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Values typ. Unit max. IC = 10 mA Collector-emitter breakdown voltage BC 807W BC 808W V(BR)CEO 45 25 - - - - - - - - - - V IC = 10 A Collector-base breakdown voltage BC 807W BC 808W V(BR)CBO 50 30 Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current V(BR)EBO ICBO 5 VCB = 25 V VCB = 25 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain IC = 100 mA, VCE = 1 V BC 807-16W...BC 808-16W BC 807-25W...BC 808-25W BC 807-40W...BC 808-40W IC = 300 mA, VCE = 1 V BC 807-16W...BC 808-16W BC 807-25W...BC 808-25W BC 807-40W...BC 808-40W Collector-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency - - - - - 100 5 100 nA A nA IEBO - hFE 100 160 250 60 100 170 160 250 350 - - - - - 250 400 630 - - - - VCEsat - 0.7 1.2 V VBEsat - f T - 200 10 60 - MHz pF - - - IC = 50 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz 1) Ccb Ceb - Pulse test: t 300 s, D 2 % BC 807W BC 808W Characteristics at TA = 25 C, unless otherwise specified. Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (tp) Collector cutoff current ICBO = f (TA) VCBO = 60 V BC 807W BC 808W DC current gain hFE = f (IC) VCE = 1 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 BC 807W BC 808W Package Outline SOT-323 Dimensions in mm |
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